SI2325DS-T1-E3

производитель:
Вишай Силиконикс
Описание:
MOSFET P-CH 150V 530MA SOT23-3
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 500mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
510 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Пакет изделий поставщика:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Ток - непрерывный отвод (Id) @ 25°C:
530mA (Ta)
Power Dissipation (Max):
750mW (Ta)
Технологии:
MOSFET (металлическая окись)
Base Product Number:
SI2325
Введение
П-канал 150 В 530 мА (Ta) 750 мВт (Ta) Поверхностная установка SOT-23-3 (TO-236)
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