СУД50Н04-8М8П-4GE3
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Пакет / чемодан:
TO-252-3, DPak (2 Lead + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8.8mOhm @ 20A, 10В
FET Type:
N-Channel
Напряжение привода (макс. RDS включено, минимум RDS включено):
4.5В, 10В
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2400 pF @ 20 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
TO-252AA
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 50A (Tc)
Power Dissipation (Max):
3.1W (Ta), 48.1W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SUD50
Введение
N-канал 40 V 14A (Ta), 50A (Tc) 3,1 W (Ta), 48,1 W (Tc) поверхностная монтаж TO-252AA
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Изображение | часть # | Описание | |
---|---|---|---|
![]() |
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
![]() |
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
![]() |
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
![]() |
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
![]() |
ИРФП21Н60ЛПБФ |
MOSFET N-CH 600V 21A TO247-3
|
|
![]() |
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
![]() |
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
![]() |
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
|
![]() |
SQSA12CENW-T1_GE3 |
AUTOMOTIVE N-CHANNEL 100 V (D-S)
|
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