SI1499DH-T1-E3
производитель:
Вишай Силиконикс
Описание:
MOSFET P-CH 8V 1.6A SC70-6
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
800mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
78mOhm @ 2A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
8 V
Vgs (Max):
±5V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 4 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SC-70-6
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
1.6A (Tc)
Power Dissipation (Max):
2.5W (Ta), 2.78W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI1499
Введение
P-Channel 8 V 1.6A (Tc) 2.5W (Ta), 2.78W (Tc) Поверхностная установка SC-70-6
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| Изображение | часть # | Описание | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
ИРФП21Н60ЛПБФ |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
СУД50Н04-8М8П-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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