БШ111БКР
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.5 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
4Ohm @ 200mA, 4.5V
Тип FET:
N-канал
Drive Voltage (Max Rds On, Min Rds On):
4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
30 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-236AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
210mA (Ta)
Power Dissipation (Max):
302mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSH111
Введение
N-Channel 55 V 210mA (Ta) 302mW (Ta) Поверхностная установка TO-236AB
СОБЩЕННЫЕ ПРОДУКТЫ

БУК7Y22-100EX
MOSFET N-CH 100V 49A LFPAK56

PMV27UPEAR
MOSFET P-CH 20V 4.5A TO236AB

ПСМН8Р7-100YSFX
PSMN8R7-100YSF/SOT669/LFPAK

БУК7Y7R6-40EX
MOSFET N-CH 40V 79A LFPAK56

BUK9M120-100EX
MOSFET N-CH 100V 11.5A LFPAK33

ПСМН3Р7-100БСЭЖ
MOSFET N-CH 100V 120A D2PAK

ПСМН2Р0-30ПЛ,127
MOSFET N-CH 30V 100A TO220AB

БУК7Y7R0-40HX
MOSFET N-CH 40V 68A LFPAK56

БУК7М10-40ЕХ
MOSFET N-CH 40V 56A LFPAK33

БУК9Y65-100Е,115
MOSFET N-CH 100V 19A LFPAK56
Изображение | часть # | Описание | |
---|---|---|---|
![]() |
БУК7Y22-100EX |
MOSFET N-CH 100V 49A LFPAK56
|
|
![]() |
PMV27UPEAR |
MOSFET P-CH 20V 4.5A TO236AB
|
|
![]() |
ПСМН8Р7-100YSFX |
PSMN8R7-100YSF/SOT669/LFPAK
|
|
![]() |
БУК7Y7R6-40EX |
MOSFET N-CH 40V 79A LFPAK56
|
|
![]() |
BUK9M120-100EX |
MOSFET N-CH 100V 11.5A LFPAK33
|
|
![]() |
ПСМН3Р7-100БСЭЖ |
MOSFET N-CH 100V 120A D2PAK
|
|
![]() |
ПСМН2Р0-30ПЛ,127 |
MOSFET N-CH 30V 100A TO220AB
|
|
![]() |
БУК7Y7R0-40HX |
MOSFET N-CH 40V 68A LFPAK56
|
|
![]() |
БУК7М10-40ЕХ |
MOSFET N-CH 40V 56A LFPAK33
|
|
![]() |
БУК9Y65-100Е,115 |
MOSFET N-CH 100V 19A LFPAK56
|
Отправьте RFQ
Запас:
MOQ: