БУК7Y8R7-60EX
производитель:
Нексперия США Инк.
Описание:
MOSFET N-CH 60V 87A LFPAK56
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Особенность FET:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Операционная температура:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8.7mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3159 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q100, TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
87A (Tc)
Power Dissipation (Max):
147W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUK7Y8
Введение
N-Channel 60 V 87A (Tc) 147W (Tc) Поверхностная установка LFPAK56, Power-SO8
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| Изображение | часть # | Описание | |
|---|---|---|---|
|
|
БУК7Y22-100EX |
MOSFET N-CH 100V 49A LFPAK56
|
|
|
|
PMV27UPEAR |
MOSFET P-CH 20V 4.5A TO236AB
|
|
|
|
ПСМН8Р7-100YSFX |
PSMN8R7-100YSF/SOT669/LFPAK
|
|
|
|
БУК7Y7R6-40EX |
MOSFET N-CH 40V 79A LFPAK56
|
|
|
|
BUK9M120-100EX |
MOSFET N-CH 100V 11.5A LFPAK33
|
|
|
|
ПСМН3Р7-100БСЭЖ |
MOSFET N-CH 100V 120A D2PAK
|
|
|
|
ПСМН2Р0-30ПЛ,127 |
MOSFET N-CH 30V 100A TO220AB
|
|
|
|
БУК7Y7R0-40HX |
MOSFET N-CH 40V 68A LFPAK56
|
|
|
|
БУК7М10-40ЕХ |
MOSFET N-CH 40V 56A LFPAK33
|
|
|
|
БУК9Y65-100Е,115 |
MOSFET N-CH 100V 19A LFPAK56
|
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