Отправить сообщение

БШ103,215

производитель:
Нексперия США Инк.
Описание:
MOSFET N-CH 30V 850MA TO236AB
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
400mV @ 1mA (Min)
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
2.1 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
400mOhm @ 500mA, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±8V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
83 pF @ 24 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-236AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
850mA (Ta)
Power Dissipation (Max):
540mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSH103
Введение
N-Channel 30 V 850mA (Ta) 540mW (Ta) Поверхностная установка TO-236AB
Отправьте RFQ
Запас:
MOQ: