RF4E075ATTCR
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerUDFN
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Rds On (Max) @ Id, Vgs:
21.7mOhm @ 7.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Вводная емкость (Ciss) (Max) @ Vds:
1000 pF @ 15 В
Mounting Type:
Surface Mount
Серия:
-
Supplier Device Package:
HUML2020L8
Мфр:
Полупроводники Rohm
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta)
Диссипация силы (Макс):
2W (животики)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RF4E075
Введение
P-Channel 30 V 7.5A (Ta) 2W (Ta) Наземная установка HUML2020L8
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Изображение | часть # | Описание | |
---|---|---|---|
![]() |
RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
|
|
![]() |
РРР040П03ТЛ |
MOSFET P-CH 30V 4A TSMT3
|
|
![]() |
RSR025P03TL |
MOSFET P-CH 30V 2.5A TSMT3
|
|
![]() |
РС1Л120ГНТБ |
MOSFET N-CH 60V 12A/36A 8HSOP
|
|
![]() |
РУМ003N02T2L |
MOSFET N-CH 20V 300MA VMT3
|
|
![]() |
РД3П130СПТЛ1 |
MOSFET P-CH 100V 13A TO252
|
|
![]() |
РД3Х200СНТЛ1 |
MOSFET N-CH 45V 20A TO252
|
|
![]() |
RSR025N05TL |
NCH 45V 2.5A SMALL SIGNAL MOSFET
|
|
![]() |
РД3П050СНТЛ1 |
MOSFET N-CH 100V 5A TO252
|
|
![]() |
RQ3E100ATTB |
MOSFET P-CH 30V 10A/31A 8HSMT
|
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