RV2C010UNT2L
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:
40 pF @ 10 V
Series:
-
Vgs (Max):
±8V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Supplier Device Package:
VML1006
Rds On (Max) @ Id, Vgs:
470mOhm @ 500mA, 4.5V
Mfr:
Rohm Semiconductor
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Power Dissipation (Max):
400mW (Ta)
Package / Case:
SC-101, SOT-883
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RV2C010
Введение
N-Channel 20 V 1A (Ta) 400mW (Ta) Поверхностная установка VML1006
СОБЩЕННЫЕ ПРОДУКТЫ

RSD050N10TL
MOSFET N-CH 100V 5A CPT3

РРР040П03ТЛ
MOSFET P-CH 30V 4A TSMT3

RSR025P03TL
MOSFET P-CH 30V 2.5A TSMT3

РС1Л120ГНТБ
MOSFET N-CH 60V 12A/36A 8HSOP

РУМ003N02T2L
MOSFET N-CH 20V 300MA VMT3

РД3П130СПТЛ1
MOSFET P-CH 100V 13A TO252

РД3Х200СНТЛ1
MOSFET N-CH 45V 20A TO252

RSR025N05TL
NCH 45V 2.5A SMALL SIGNAL MOSFET

РД3П050СНТЛ1
MOSFET N-CH 100V 5A TO252

RQ3E100ATTB
MOSFET P-CH 30V 10A/31A 8HSMT
Изображение | часть # | Описание | |
---|---|---|---|
![]() |
RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
|
|
![]() |
РРР040П03ТЛ |
MOSFET P-CH 30V 4A TSMT3
|
|
![]() |
RSR025P03TL |
MOSFET P-CH 30V 2.5A TSMT3
|
|
![]() |
РС1Л120ГНТБ |
MOSFET N-CH 60V 12A/36A 8HSOP
|
|
![]() |
РУМ003N02T2L |
MOSFET N-CH 20V 300MA VMT3
|
|
![]() |
РД3П130СПТЛ1 |
MOSFET P-CH 100V 13A TO252
|
|
![]() |
РД3Х200СНТЛ1 |
MOSFET N-CH 45V 20A TO252
|
|
![]() |
RSR025N05TL |
NCH 45V 2.5A SMALL SIGNAL MOSFET
|
|
![]() |
РД3П050СНТЛ1 |
MOSFET N-CH 100V 5A TO252
|
|
![]() |
RQ3E100ATTB |
MOSFET P-CH 30V 10A/31A 8HSMT
|
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