RQ5E025ATTCL
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SC-96
Gate Charge (Qg) (Max) @ Vgs:
2.7 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
91mOhm @ 2.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Вводная емкость (Ciss) (Max) @ Vds:
220 pF @ 15 В
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TSMT3
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Power Dissipation (Max):
1W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RQ5E025
Введение
П-канал 30 V 2,5A (Ta) 1W (Tc) поверхностная установка TSMT3
СОБЩЕННЫЕ ПРОДУКТЫ

RSD050N10TL
MOSFET N-CH 100V 5A CPT3

РРР040П03ТЛ
MOSFET P-CH 30V 4A TSMT3

RSR025P03TL
MOSFET P-CH 30V 2.5A TSMT3

РС1Л120ГНТБ
MOSFET N-CH 60V 12A/36A 8HSOP

РУМ003N02T2L
MOSFET N-CH 20V 300MA VMT3

РД3П130СПТЛ1
MOSFET P-CH 100V 13A TO252

РД3Х200СНТЛ1
MOSFET N-CH 45V 20A TO252

RSR025N05TL
NCH 45V 2.5A SMALL SIGNAL MOSFET

РД3П050СНТЛ1
MOSFET N-CH 100V 5A TO252

RQ3E100ATTB
MOSFET P-CH 30V 10A/31A 8HSMT
Изображение | часть # | Описание | |
---|---|---|---|
![]() |
RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
|
|
![]() |
РРР040П03ТЛ |
MOSFET P-CH 30V 4A TSMT3
|
|
![]() |
RSR025P03TL |
MOSFET P-CH 30V 2.5A TSMT3
|
|
![]() |
РС1Л120ГНТБ |
MOSFET N-CH 60V 12A/36A 8HSOP
|
|
![]() |
РУМ003N02T2L |
MOSFET N-CH 20V 300MA VMT3
|
|
![]() |
РД3П130СПТЛ1 |
MOSFET P-CH 100V 13A TO252
|
|
![]() |
РД3Х200СНТЛ1 |
MOSFET N-CH 45V 20A TO252
|
|
![]() |
RSR025N05TL |
NCH 45V 2.5A SMALL SIGNAL MOSFET
|
|
![]() |
РД3П050СНТЛ1 |
MOSFET N-CH 100V 5A TO252
|
|
![]() |
RQ3E100ATTB |
MOSFET P-CH 30V 10A/31A 8HSMT
|
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