SCT3160KLGC11
производитель:
Полупроводники Rohm
Описание:
SICFET N-CH 1200V 17A TO247N
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.6V @ 2.5mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 18 V
Rds On (Max) @ Id, Vgs:
208mOhm @ 5A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
398 pF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247N
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Power Dissipation (Max):
103W (Tc)
Technology:
SiCFET (Silicon Carbide)
Номер базовой продукции:
SCT3160
Введение
N-канал 1200 V 17A (Tc) 103W (Tc) через отверстие TO-247N
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| Изображение | часть # | Описание | |
|---|---|---|---|
|
|
RSD050N10TL |
MOSFET N-CH 100V 5A CPT3
|
|
|
|
РРР040П03ТЛ |
MOSFET P-CH 30V 4A TSMT3
|
|
|
|
RSR025P03TL |
MOSFET P-CH 30V 2.5A TSMT3
|
|
|
|
РС1Л120ГНТБ |
MOSFET N-CH 60V 12A/36A 8HSOP
|
|
|
|
РУМ003N02T2L |
MOSFET N-CH 20V 300MA VMT3
|
|
|
|
РД3П130СПТЛ1 |
MOSFET P-CH 100V 13A TO252
|
|
|
|
РД3Х200СНТЛ1 |
MOSFET N-CH 45V 20A TO252
|
|
|
|
RSR025N05TL |
NCH 45V 2.5A SMALL SIGNAL MOSFET
|
|
|
|
РД3П050СНТЛ1 |
MOSFET N-CH 100V 5A TO252
|
|
|
|
RQ3E100ATTB |
MOSFET P-CH 30V 10A/31A 8HSMT
|
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