АПТ8030ЛВФРГ
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
4V @ 2.5mA
Series:
POWER MOS V®
Gate Charge (Qg) (Max) @ Vgs:
510 nC @ 10 V
Supplier Device Package:
TO-264 [L]
Rds On (Max) @ Id, Vgs:
300mOhm @ 500mA, 10V
Mfr:
Microchip Technology
Input Capacitance (Ciss) (Max) @ Vds:
7900 pF @ 25 V
Drain to Source Voltage (Vdss):
800 V
Package / Case:
TO-264-3, TO-264AA
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
APT8030
Введение
N-канал 800 V 27A (Tc) через отверстие TO-264 [L]
Related Products

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MOSFET N-CH 1000V 145A SP6

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АПТ10045LFLLG
MOSFET N-CH 1000V 23A TO264
Изображение | часть # | Описание | |
---|---|---|---|
![]() |
АПТМ100UM65SAG |
MOSFET N-CH 1000V 145A SP6
|
|
![]() |
АПТ50М75JFLL |
MOSFET N-CH 500V 51A ISOTOP
|
|
![]() |
АПТ10045LFLLG |
MOSFET N-CH 1000V 23A TO264
|
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