НВД3055-150Т4Г-ВФ01
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Особенность FET:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Операционная температура:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Загрузка шлюза (Qg) (макс.) @ Vgs:
15 nC @ 10 v
Rds On (Max) @ Id, Vgs:
150mOhm @ 4.5A, 10V
Тип FET:
N-канал
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
280 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
DPAK
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Power Dissipation (Max):
1.5W (Ta), 28.8W (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVD3055
Введение
N-Channel 60 V 9A (Ta) 1.5W (Ta), 28.8W (Tj) Поверхностная установка DPAK
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