IXTT30N60L2
производитель:
ИКСИС
Описание:
MOSFET N-CH 600V 30A TO268
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
335 nC @ 10 V
Rds On (Max) @ Id, Vgs:
240mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
10700 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Linear L2™
Supplier Device Package:
TO-268AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
540W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTT30
Введение
N-Channel 600 V 30A (Tc) 540W (Tc) поверхностная установка TO-268AA
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| Изображение | часть # | Описание | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
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|
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|
IXFH13N50 |
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|
IXFN32N120P |
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|
IXFN32N100Q3 |
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|
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|
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