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IXFH26N60P

производитель:
ИКСИС
Описание:
MOSFET N-CH 600V 26A TO247AD
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
72 nC @ 10 V
Rds On (Max) @ Id, Vgs:
270mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4150 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-247AD (IXFH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Power Dissipation (Max):
460W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH26
Введение
N-Channel 600 V 26A (Tc) 460W (Tc) через отверстие TO-247AD (IXFH)
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