FCP104N60F
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
145 nC @ 10 V
Rds On (Max) @ Id, Vgs:
104mOhm @ 18.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
6130 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar™
Supplier Device Package:
TO-220-3
Мфр:
ОНСЕМИ
Current - Continuous Drain (Id) @ 25°C:
37A (Tc)
Диссипация силы (Макс):
357W (Tc)
Technology:
MOSFET (Metal Oxide)
Номер базовой продукции:
FCP104
Введение
N-канал 600 V 37A (Tc) 357W (Tc) через отверстие TO-220-3
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Запас:
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