NVMFS5C460NLWFAFT1G
Спецификации
Категория:
Дискретные полупроводниковые изделия
Транзисторы
FET, MOSFET
Одиночные FET, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
2В @ 250μA
Operating Temperature:
-55°C ~ 175°C (TJ)
Пакет / чемодан:
8-PowerTDFN, 5 руководств
Gate Charge (Qg) (Max) @ Vgs:
23 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.5 мОм @ 35А, 10В
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
21A (Ta), 78A (Tc)
Power Dissipation (Max):
3.6W (Ta), 50W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMFS5
Введение
N-Channel 40 V 21A (Ta), 78A (Tc) 3.6W (Ta), 50W (Tc) Поверхностная установка 5-DFN (5x6) (8-SOFL)
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