FDS6575
производитель:
ОНСЕМИ
Описание:
MOSFET P-CH 20V 10A 8SOIC
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Особенность FET:
-
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Операционная температура:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
74 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
13mOhm @ 10A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4951 pF @ 10 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS65
Введение
P-Channel 20 V 10A (Ta) 2.5W (Ta) На поверхности установка 8-SOIC
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