IXTH12N150
производитель:
ИКСИС
Описание:
MOSFET N-CH 1500V 12A TO247
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
106 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2Ohm @ 6A, 10V
Тип FET:
N-канал
Drive Voltage (Max Rds On, Min Rds On):
10V
Пакет:
Трубка
Drain to Source Voltage (Vdss):
1500 V
Vgs (макс.):
±30V
Product Status:
Active
Вводная емкость (Ciss) (Max) @ Vds:
3720 pF @ 25 В
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH12
Введение
N-Channel 1500 V 12A (Tc) 890W (Tc) через отверстие TO-247 (IXTH)
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| Изображение | часть # | Описание | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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