IRFS4115TRLPBF
производитель:
Инфинеон Технологии
Описание:
MOSFET N-CH 150V 195A D2PAK
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Rds On (Max) @ Id, Vgs:
12.1mOhm @ 62A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5270 pF @ 50 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
D2PAK
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
195A (Tc)
Power Dissipation (Max):
375W (Tc)
Technology:
MOSFET (Metal Oxide)
Номер базовой продукции:
IRFS4115
Введение
N-Channel 150 V 195A (Tc) 375W (Tc) Поверхностная установка D2PAK
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