FQD13N06TM
производитель:
ОНСЕМИ
Описание:
MOSFET N-CH 60V 10A DPAK
Категория:
Дискретные продукты полупроводника
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Пакет / чемодан:
TO-252-3, DPak (2 Lead + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
7.5 nC @ 10 V
Rds On (Max) @ Id, Vgs:
140mOhm @ 5A, 10V
Тип FET:
N-канал
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±25V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
310 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Power Dissipation (Max):
2.5W (Ta), 28W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQD13N06
Введение
N-Channel 60 V 10A (Tc) 2.5W (Ta), 28W (Tc) Поверхностная установка TO-252AA
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