ДМН30Х4Д0ЛФДЕ-7
Спецификации
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Особенность FET:
-
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Операционная температура:
-55°C ~ 150°C (TJ)
Package / Case:
6-PowerUDFN
Загрузка шлюза (Qg) (макс.) @ Vgs:
7.6 nC @ 10 В
Rds On (Max) @ Id, Vgs:
4Ohm @ 300mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
187.3 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
U-DFN2020-6 (Type E)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
550mA (Ta)
Power Dissipation (Max):
630mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN30
Введение
N-Channel 300 V 550mA (Ta) 630mW (Ta) Наземная установка U-DFN2020-6 (тип E)
СОБЩЕННЫЕ ПРОДУКТЫ

ДМТХ43М8LFGQ-13
MOSFET N-CH 40V PWRDI3333

DMP4015SPSQ-13
MOSFET P-CH 40V 8.5A PWRDI5060-8

ZXMP6A13FTA
MOSFET P-CH 60V 900MA SOT23-3

ДМГ301НУ-7
MOSFET N-CH 25V 260MA SOT23

DMTH6016LPSQ-13
MOSFET N-CHA 60V 10.6A POWERDI

ZXMN6A07FTA
MOSFET N-CH 60V 1.2A SOT23-3

ZXMP6A17GTA
MOSFET P-CH 60V 3A SOT223

ZXMP6A17E6TA
MOSFET P-CH 60V 2.3A SOT26

ДМП3010ЛК3-13
MOSFET P-CH 30V 17A TO252-3

ДМП2165УВ-7
MOSFET P-CH 20V 2.5A SOT323 T&R
Изображение | часть # | Описание | |
---|---|---|---|
![]() |
ДМТХ43М8LFGQ-13 |
MOSFET N-CH 40V PWRDI3333
|
|
![]() |
DMP4015SPSQ-13 |
MOSFET P-CH 40V 8.5A PWRDI5060-8
|
|
![]() |
ZXMP6A13FTA |
MOSFET P-CH 60V 900MA SOT23-3
|
|
![]() |
ДМГ301НУ-7 |
MOSFET N-CH 25V 260MA SOT23
|
|
![]() |
DMTH6016LPSQ-13 |
MOSFET N-CHA 60V 10.6A POWERDI
|
|
![]() |
ZXMN6A07FTA |
MOSFET N-CH 60V 1.2A SOT23-3
|
|
![]() |
ZXMP6A17GTA |
MOSFET P-CH 60V 3A SOT223
|
|
![]() |
ZXMP6A17E6TA |
MOSFET P-CH 60V 2.3A SOT26
|
|
![]() |
ДМП3010ЛК3-13 |
MOSFET P-CH 30V 17A TO252-3
|
|
![]() |
ДМП2165УВ-7 |
MOSFET P-CH 20V 2.5A SOT323 T&R
|
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